Home / Products / Details / Tgf2979 Sm
TGF2979-SM
GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Qorvo | |
| Product Category | GaN FETs | |
| Shipping Restrictions | This product may require additional documentation to export from the United States. | |
| RoHS | Details | |
| Mounting Style | SMD/SMT | |
| Package / Case | QFN-20 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 32 V | |
| Id - Continuous Drain Current | 1.8 A | |
| Maximum Operating Temperature | + 225 C | |
| Pd - Power Dissipation | 49 W | |
| Brand | Qorvo | |
| Configuration | Single | |
| Development Kit | TGF2979-SMEVB1 | |
| Gain | 11 dB | |
| Maximum Operating Frequency | 12 GHz | |
| Minimum Operating Frequency | 0 Hz | |
| Moisture Sensitive | Yes | |
| Output Power | 22 W | |
| Packaging | Tray | |
| Product | RF JFET Transistors | |
| Product Type | GaN FETs | |
| Series | TGF2979 | |
| Factory Pack Quantity: Factory Pack Quantity | 25 | |
| Subcategory | Transistors | |
| Technology | GaN | |
| Transistor Type | HEMT | |
| Type | GaN SiC HEMT | |
| Vgs - Gate-Source Breakdown Voltage | - 2.7 V | |
| Part # Aliases | TGF2979 1127378 | |
| Unit Weight | 0.004339 oz |
| USHTS | 8541290095 |
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | 3A001.b.3.b.2 |
TGF297x GaN RF Transistors
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz and offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at a high drain bias operation. Qorvo TGF297x GaN RF Transistors are ideal for military radar and commercial radar including avionics, marine, and weather.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Pricing (USD)
| Qty | Unit Price | Ext. Price |
|---|---|---|
Normal | ||
| 25 | 66.85 | USD 1671.25 |
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