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QPA2212D
RF Amplifier 27-31GHz 25W GaN POWER AMP
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Qorvo | |
| Product Category | RF Amplifier | |
| Shipping Restrictions | This product may require additional documentation to export from the United States. | |
| RoHS | Details | |
| Operating Frequency | 27.5 GHz to 31 GHz | |
| Operating Supply Voltage | 22 V | |
| Operating Supply Current | 460 mA | |
| Gain | 21.7 dB | |
| Type | Power Amplifiers | |
| Mounting Style | SMD/SMT | |
| Package / Case | Die | |
| Technology | GaN SiC | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 85 C | |
| Series | QPA2212D | |
| Brand | Qorvo | |
| Development Kit | QPA2212D EVB | |
| Input Return Loss | 29 dB | |
| Pd - Power Dissipation | 80.3 W | |
| Product Type | RF Amplifier | |
| Factory Pack Quantity: Factory Pack Quantity | 10 | |
| Subcategory | Wireless & RF Integrated Circuits |
| USHTS | 8542330001 |
| CAHTS | 8542330000 |
| TARIC | 8542330000 |
| MXHTS | 8542330299 |
| ECCN | 3A001.b.2.c |
QPA2212D Ka-Band GaN Power Amplifier
Qorvo QPA2212D Ka-Band GaN Power Amplifier is fabricated using a 0.15µm Gallium Nitride on Silicon Carbide (GaN on SiC) process (QGaN15). Operating between 27GHz and 31GHz, the QPA2212D achieves 10W linear power with -25dBc intermodulation distortion and 22dB small-signal gain. Saturated output power is 25W with a power-added efficiency of 25%.
Pricing (USD)
| Qty | Unit Price | Ext. Price |
|---|---|---|
Normal | ||
| 10 | 927.00 | USD 9270.00 |
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