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SIHFR1N60A-GE3

MOSFETs 600V Vds TO-252 DPAK

Part No:
SIHFR1N60A-GE3
Mfr:
Vishay / Siliconix
Description:
MOSFETs 600V Vds TO-252 DPAK
Product AttributeAttribute ValueSelect
Manufacturer
Vishay
Product Category
MOSFETs
RoHS
 Details
REACH - SVHC
Details
Technology
Si
Mounting Style
SMD/SMT
Package / Case
DPAK-3 (TO-252-3)
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
1.4 A
Rds On - Drain-Source Resistance
7 Ohms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
14 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
36 W
Channel Mode
Enhancement
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Brand
Vishay / Siliconix
Configuration
Single
Fall Time
20 ns
Forward Transconductance - Min
0.88 S
Height
2.38 mm
Length
6.73 mm
Product Type
MOSFETs
Rise Time
14 ns
Series
SIHFR
Factory Pack Quantity: Factory Pack Quantity
3000
Subcategory
Transistors
Typical Turn-Off Delay Time
18 ns
Typical Turn-On Delay Time
9.8 ns
Width
6.22 mm
Unit Weight
0.011640 oz
USHTS
8541290095
CNHTS
8541290000
CAHTS
8541100090
JPHTS
854110090
KRHTS
8541109000
TARIC
8541290000
MXHTS
8541100101
ECCN
EAR99
Category
Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer
VISHAY
Package
TO-252AA
Drain to Source Voltage
600V
Current - Continuous Drain(Id)
1.4A
Pd - Power Dissipation
36W
RDS(on)
7Ω@10V,840mA
Number
One N-channel
Operating Junction Temperature Range
-55℃~+150℃@(Tj)
Input Capacitance(Ciss)
229pF@25V
ECCN
EAR99
CNHTS
8541290000
USHTS
8541290095
TARIC
8541290000
CAHTS
8541290000
BRHTS
85412910
INHTS
85412900
MXHTS
8541.29.99
Datasheet
VISHAY SIHFR1N60A-GE3
EDA Models
EasyEDA Model
Minimum
1
Multiple
1
Standard Packaging
3000
Sales Unit
Piece

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