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SUP70060E-GE3
MOSFETs 100V Vds 20V Vgs TO-220
Product Attribute | Attribute Value | Select |
---|---|---|
Manufacturer | Vishay | |
Product Category | MOSFETs | |
RoHS | Details | |
REACH - SVHC | Details | |
Technology | Si | |
Mounting Style | Through Hole | |
Package / Case | TO-220-3 | |
Transistor Polarity | N-Channel | |
Number of Channels | 1 Channel | |
Vds - Drain-Source Breakdown Voltage | 100 V | |
Id - Continuous Drain Current | 131 A | |
Rds On - Drain-Source Resistance | 4.8 mOhms | |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
Vgs th - Gate-Source Threshold Voltage | 2 V | |
Qg - Gate Charge | 81 nC | |
Minimum Operating Temperature | - 55 C | |
Maximum Operating Temperature | + 175 C | |
Pd - Power Dissipation | 200 W | |
Channel Mode | Enhancement | |
Tradename | ThunderFET | |
Packaging | Tube | |
Brand | Vishay / Siliconix | |
Configuration | Single | |
Fall Time | 9 ns | |
Forward Transconductance - Min | 85 S | |
Height | 15.49 mm | |
Length | 10.41 mm | |
Product Type | MOSFETs | |
Rise Time | 22 ns | |
Series | SUP700 | |
Factory Pack Quantity: Factory Pack Quantity | 500 | |
Subcategory | Transistors | |
Transistor Type | 1 N-Channel | |
Typical Turn-Off Delay Time | 27 ns | |
Typical Turn-On Delay Time | 13 ns | |
Width | 4.7 mm | |
Unit Weight | 0.068784 oz |
USHTS | 8541290095 |
CNHTS | 8541290000 |
CAHTS | 8541100090 |
JPHTS | 854110090 |
KRHTS | 8541109000 |
TARIC | 8541290000 |
MXHTS | 8541100101 |
ECCN | EAR99 |

TrenchFET® MOSFETs
Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

40V TrenchFET Gen IV & 100V ThunderFET MOSFETs
Vishay / Siliconix 40V TrenchFET Gen IV and 100V ThunderFET MOSFETs offer low ON-resistance and low total gate charge. This low ON-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Available packages include TO-220, TO-252, as well as a space-saving, small-outline PowerPAK® option. Vishay / Siliconix 40V TrenchFET Gen IV and 100V ThunderFET MOSFETs are 100% Rg and UIS tested, halogen free, and RoHS compliant.

ThunderFET® Power MOSFETs
Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Industrial Power Solutions
Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
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