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BC33725TAR

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Part No:
BC33725TAR
Mfr:
onsemi / Fairchild
Description:
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Product AttributeAttribute ValueSelect
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
RoHS
 Details
Technology
Si
Mounting Style
Through Hole
Package / Case
TO-92-3 Kinked Lead
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
800 mA
Collector- Emitter Voltage VCEO Max
45 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
700 mV
Pd - Power Dissipation
625 mW
Gain Bandwidth Product fT
100 MHz
Maximum Operating Temperature
+ 150 C
Series
BC337
Packaging
Ammo Pack
Brand
onsemi / Fairchild
Continuous Collector Current
800 mA
DC Current Gain hFE Max
630
Height
4.7 mm
Length
4.7 mm
Product Type
BJTs - Bipolar Transistors
Factory Pack Quantity: Factory Pack Quantity
2000
Subcategory
Transistors
Width
3.93 mm
Unit Weight
0.009524 oz
USHTS
8541210095
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
KRHTS
8541219000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99

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