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TP65H050G4WS
GaN FETs GAN FET 650V 34A TO247
Part No:
TP65H050G4WS
Mfr:
Transphorm
Description:
GaN FETs GAN FET 650V 34A TO247
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Transphorm | |
| Product Category | GaN FETs | |
| RoHS | Details | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 34 A | |
| Rds On - Drain-Source Resistance | 60 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 4.8 V | |
| Qg - Gate Charge | 24 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 119 W | |
| Channel Mode | Enhancement | |
| Brand | Transphorm | |
| Configuration | Single | |
| Fall Time | 10.9 ns | |
| Packaging | Tube | |
| Product Type | GaN FETs | |
| Rise Time | 11.3 ns | |
| Factory Pack Quantity: Factory Pack Quantity | 30 | |
| Subcategory | Transistors | |
| Technology | GaN | |
| Typical Turn-Off Delay Time | 88.3 ns | |
| Typical Turn-On Delay Time | 49.2 ns |
| USHTS | 8541290095 |
| CNHTS | 8541290000 |
| ECCN | EAR99 |
650V 34A GaN FETs
Transphorm 650V 34A GaN (Gallium Nitride) FETs are normally-off devices using Transphorm's Gen IV platform. The FETs combine a high voltage GaN HEMT with a low voltage silicon MOSFET. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. GaN FETs have inherently superior performance over traditional silicon FETs, offering faster switching and better thermal performance.
