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SCT2080KEHRC11

SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N

Part No:

SCT2080KEHRC11

Mfr:

ROHM Semiconductor

Description:

SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N

Product Attribute	Attribute Value	Select
Manufacturer	ROHM Semiconductor
Product Category	SiC MOSFETs
RoHS	Details
REACH - SVHC	Details
Mounting Style	Through Hole
Package / Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	80 mOhms
Vgs - Gate-Source Voltage	- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage	1.6 V
Qg - Gate Charge	106 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	262 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Brand	ROHM Semiconductor
Configuration	Single
Fall Time	22 ns
Packaging	Tube
Product	MOSFET's
Product Type	SiC MOSFETS
Rise Time	36 ns
Series	SCT2x
Factory Pack Quantity: Factory Pack Quantity	450
Subcategory	Transistors
Technology	SiC
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	76 ns
Typical Turn-On Delay Time	35 ns
Part # Aliases	SCT2080KEHR
Unit Weight	0.211644 oz

USHTS	8541290095
CNHTS	8541290000
ECCN	EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

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