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RN2903FE(TE85L,F)

Digital Transistors ES6 PLN (LF) TRANSISTOR Pd=200mW F=200MHz

Part No:
RN2903FE(TE85L,F)
Mfr:
Toshiba
Description:
Digital Transistors ES6 PLN (LF) TRANSISTOR Pd=200mW F=200MHz
Product AttributeAttribute ValueSelect
Manufacturer
Toshiba
Product Category
Digital Transistors
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
22 kOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
ES-6
DC Collector/Base Gain hfe Min
70
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Packaging
Reel
Packaging
Cut Tape
Brand
Toshiba
Channel Mode
Enhancement
Emitter- Base Voltage VEBO
- 10 V
Maximum DC Collector Current
- 100 mA
Product Type
Digital Transistors
Factory Pack Quantity: Factory Pack Quantity
4000
Subcategory
Transistors
USHTS
8541210095
CAHTS
8541210000
TARIC
8541210000
MXHTS
8541210100
ECCN
EAR99
Bias Resistor Built-in Transistors (BRT)

Toshiba Bias Resistor Built-in Transistors (BRT) offer a wide range of polarity options. The bias resistor transistors are available in NPN, PNP, NPN + PNP, PNP + NPN, NPN x 2, and PNP x 2 polarities. The Toshiba bias resistor built-in transistors offer 3-pin, 5-pin, and 6-pin configurations with options for single, 2-in-1 (point-symmetrical), and 2-in-1 (common-emitter) internal connections.

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