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MT53E512M32D1ZW-046 AUT:B

DRAM LPDDR4 16Gbit 32 200/264 TFBGA 1 UT

Part No:
MT53E512M32D1ZW-046 AUT:B
Mfr:
Micron
Description:
DRAM LPDDR4 16Gbit 32 200/264 TFBGA 1 UT
Product AttributeAttribute ValueSelect
Manufacturer
Micron Technology
Product Category
DRAM
RoHS
 Details
Type
SDRAM Mobile - LPDDR4
Memory Size
16 Gbit
Data Bus Width
32 bit
Maximum Clock Frequency
2.133 GHz
Package / Case
TFBGA-200
Organization
512 M x 32
Access Time
3.5 ns
Supply Voltage - Min
1.06 V
Supply Voltage - Max
1.95 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 125 C
Packaging
Tray
Brand
Micron
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Product Type
DRAM
Factory Pack Quantity: Factory Pack Quantity
1360
Subcategory
Memory & Data Storage
USHTS
8542320036
CNHTS
8542329010
CAHTS
8542320020
MXHTS
8542320299
ECCN
EAR99
LPDDR4 Memory

Micron LPDDR4 Memory is optimized to address power consumption issues in battery operated applications. These memory devices offer 33% faster peak bandwidth compared to DDR4. The LPDDR4 Memory provide 5 times lower power consumption in standby mode compared to standard DRAM. These Memory Devices feature Multi-Chip Package (MCP) and Package-on-Package (PoP) designs that save PCB space. The LPDDR4 Memory Devices optimize x16, x32, and x64 configurations and offer BOM savings for certain applications. The LPDDR4 Memory combines performance, power, latency, and physical space that makes it energy-efficient. These LPDDR4 Memory Devices are suitable for handsets, battery operated applications, and ultra-portables.

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