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IS42S32160F-6BLI

DRAM SDRAM,512M,3.3V,RoHs 166MHz,16Mx32, IT

Part No:
IS42S32160F-6BLI
Mfr:
ISSI
Description:
DRAM SDRAM,512M,3.3V,RoHs 166MHz,16Mx32, IT
Product AttributeAttribute ValueSelect
Manufacturer
ISSI
Product Category
DRAM
RoHS
 Details
Type
SDRAM
Memory Size
512 Mbit
Data Bus Width
32 bit
Maximum Clock Frequency
167 MHz
Package / Case
BGA-90
Organization
16 M x 32
Access Time
6 ns
Supply Voltage - Min
3 V
Supply Voltage - Max
3.6 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Series
IS42S32160F
Packaging
Tray
Brand
ISSI
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Product Type
DRAM
Factory Pack Quantity: Factory Pack Quantity
240
Subcategory
Memory & Data Storage
Supply Current - Max
245 mA
Unit Weight
0.007161 oz
USHTS
8542320028
CNHTS
8542329000
CAHTS
8542320020
JPHTS
854232021
KRHTS
8542321010
MXHTS
8542320299
ECCN
EAR99
3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.

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