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IAUC100N08S5N043ATMA1

MOSFETs MOSFET_(75V 120V(

Part No:

IAUC100N08S5N043ATMA1

Mfr:

Infineon Technologies

Description:

MOSFETs MOSFET_(75V 120V(

Product Attribute	Attribute Value	Select
Manufacturer	Infineon
Product Category	MOSFETs
RoHS	Details
REACH - SVHC	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TSDSON-8
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.2 V
Qg - Gate Charge	56 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	125 W
Channel Mode	Enhancement
Packaging	Reel
Packaging	Cut Tape
Packaging	MouseReel
Brand	Infineon Technologies
Configuration	Single
Fall Time	10 ns
Product Type	MOSFETs
Rise Time	4 ns
Series	IAUC100N08
Factory Pack Quantity: Factory Pack Quantity	5000
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	8 ns
Part # Aliases	IAUC100N08S5N043 SP001780758
Unit Weight	0.003966 oz

USHTS	8541290095
CNHTS	8541290000
TARIC	8541290000
ECCN	EAR99

OptiMOS™ 5 75V-100V Automotive MOSFETs

Infineon Technologies OptiMOS™ 5 75V to 100V Automotive MOSFETs are designed for high-performance applications and feature an extended qualification that goes beyond AEC-Q101 standards. The N-channel enhancement mode device combines a robust design with advanced technology, integrating Linear FET (LINFET) and low RDS(on) FET (ONFET) characteristics into a single package. This dual-gate configuration provides dedicated gate pins for each MOSFET, enhancing flexibility and control in circuit design. The Linear FET boasts an improved Safe Operating Area (SOA) and superior paralleling capabilities, ensuring reliable linear operation under varying conditions. The Infineon Technologies OptiMOS™ 5 75V to 100V MOSFETs operate within a wide -55°C to +175°C temperature range and are available in a PG-HSOF-8-2 package.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

USB-C Chargers & Adapters

Infineon Technologies offers tailor-made semiconductors that consider customers’ priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C™ source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery, and ESD protection devices.

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