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HN1C03FU-A(TE85L,F
Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SMT-6 | |
| Transistor Polarity | NPN | |
| Configuration | Single | |
| Maximum DC Collector Current | 300 mA | |
| Collector- Emitter Voltage VCEO Max | 20 V | |
| Collector- Base Voltage VCBO | 50 V | |
| Emitter- Base Voltage VEBO | 20 V | |
| Collector-Emitter Saturation Voltage | 42 mV | |
| Pd - Power Dissipation | 200 mW | |
| Gain Bandwidth Product fT | 30 MHz | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Series | HN1C03 | |
| Packaging | Reel | |
| Packaging | Cut Tape | |
| Brand | Toshiba | |
| Continuous Collector Current | 300 mA | |
| DC Collector/Base Gain hfe Min | 200 | |
| DC Current Gain hFE Max | 1200 | |
| Product Type | BJTs - Bipolar Transistors | |
| Factory Pack Quantity: Factory Pack Quantity | 3000 | |
| Subcategory | Transistors |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Bipolar Transistors
Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.
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