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DMN6075SQ-7

MOSFETs MOSFET BVDSS: 41V~60V SOT23 T and R 3K

Part No:
DMN6075SQ-7
Mfr:
Diodes Incorporated
Description:
MOSFETs MOSFET BVDSS: 41V~60V SOT23 T and R 3K
Product AttributeAttribute ValueSelect
Manufacturer
Diodes Incorporated
Product Category
MOSFETs
RoHS
 Details
Technology
Si
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
2 A
Rds On - Drain-Source Resistance
85 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
12.3 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
800 mW
Channel Mode
Enhancement
Qualification
AEC-Q101
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Brand
Diodes Incorporated
Configuration
Single
Fall Time
11 ns
Product Type
MOSFETs
Rise Time
4.1 ns
Factory Pack Quantity: Factory Pack Quantity
3000
Subcategory
Transistors
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
3.5 ns
Unit Weight
0.000282 oz
USHTS
8541210095
CNHTS
8541210000
TARIC
8541290000
ECCN
EAR99
Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

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