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DMN6075SQ-7
MOSFETs MOSFET BVDSS: 41V~60V SOT23 T and R 3K
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Diodes Incorporated | |
| Product Category | MOSFETs | |
| RoHS | Details | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOT-23-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Id - Continuous Drain Current | 2 A | |
| Rds On - Drain-Source Resistance | 85 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| Qg - Gate Charge | 12.3 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 800 mW | |
| Channel Mode | Enhancement | |
| Qualification | AEC-Q101 | |
| Packaging | Reel | |
| Packaging | Cut Tape | |
| Packaging | MouseReel | |
| Brand | Diodes Incorporated | |
| Configuration | Single | |
| Fall Time | 11 ns | |
| Product Type | MOSFETs | |
| Rise Time | 4.1 ns | |
| Factory Pack Quantity: Factory Pack Quantity | 3000 | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 35 ns | |
| Typical Turn-On Delay Time | 3.5 ns | |
| Unit Weight | 0.000282 oz |
| USHTS | 8541210095 |
| CNHTS | 8541210000 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs |
| Manufacturer | DIODES |
| Package | SOT-23 |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2.5A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 69mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 24.6pF |
| Number | One N-channel |
| Output Capacitance(Coss) | 32.6pF |
| Pd - Power Dissipation | 1.15W |
| Input Capacitance(Ciss) | 606pF |
| Gate Charge(Qg) | 12.3nC@10V |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Datasheet | DIODES DMN6075SQ-7 |
| EDA Models | EasyEDA Model |
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| 9,000+ | $ 0.1021 |
| 18,000+ | $ 0.0995 |
| 27,000+ | $ 0.096 |
| 54,000+ | $ 0.0934 |
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