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YJG110G10B
100V 110A 113W 4mΩ@10V 3V@250uA PDFN5060-8L Single FETs, MOSFETs ROHS
Part No:
YJG110G10B
Mfr:
YANGJIE
Description:
100V 110A 113W 4mΩ@10V 3V@250uA PDFN5060-8L Single FETs, MOSFETs ROHS
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs |
| Manufacturer | YANGJIE |
| Package | PDFN5060-8L |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 110A |
| Pd - Power Dissipation | 113W |
| RDS(on) | 4mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Output Capacitance(Coss) | 1.6nF |
| Input Capacitance(Ciss) | 4.3nF |
| Gate Charge(Qg) | 55nC@10V |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Datasheet | YANGJIE YJG110G10B |
| EDA Models | EasyEDA Model |
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Enter Quantity:
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