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TSA65R190S3
650V 20A 250W 190mΩ@10V 4V@250uA 1 N-Channel TO-3P Single FETs, MOSFETs ROHS
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs |
| Manufacturer | Truesemi |
| Package | TO-3P |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| Pd - Power Dissipation | 250W |
| RDS(on) | 190mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | N-Channel |
| Number | 1 N-Channel |
| Gate Charge(Qg) | 36.5nC@10V |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Datasheet | Truesemi TSA65R190S3 |
| EDA Models | EasyEDA Model |
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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