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MJD122-HXY
100V 1.5W 12000@4A,4V 8A NPN TO-252-2L Single Bipolar Transistors ROHS
Part No:
MJD122-HXY
Mfr:
HXY MOSFET
Description:
100V 1.5W 12000@4A,4V 8A NPN TO-252-2L Single Bipolar Transistors ROHS
| Category | Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors |
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 10uA |
| Collector - Emitter Voltage VCEO | 100V |
| Pd - Power Dissipation | 1.5W |
| Operating temperature | -55℃~+150℃ |
| DC Current Gain | 12000@4A,4V |
| Current - Collector(Ic) | 8A |
| Transition frequency(fT) | - |
| Type | NPN |
| Vce Saturation(VCE(sat)) | 4V@8A,80mA |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Datasheet | HXY MOSFET MJD122-HXY |
| EDA Models | EasyEDA Model |
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
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