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BCW66H

330mW 75V 630@2mA,5V 800mA NPN SOT-23 Single Bipolar Transistors ROHS

Part No:
BCW66H
Mfr:
LGE
Description:
330mW 75V 630@2mA,5V 800mA NPN SOT-23 Single Bipolar Transistors ROHS
Category
Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors
Manufacturer
LGE
Package
SOT-23
Emitter-Base Voltage(Vebo)
5V
Current - Collector Cutoff
20nA
Pd - Power Dissipation
330mW
Collector - Emitter Voltage VCEO
75V
DC Current Gain
630@2mA,5V
Operating temperature
-65℃~+150℃
Current - Collector(Ic)
800mA
Transition frequency(fT)
170MHz
Type
NPN
Vce Saturation(VCE(sat))
700mV
CNHTS
8541210000
USHTS
8541210095
TARIC
8541210000
CAHTS
8541210000
BRHTS
85412199
INHTS
85412100
MXHTS
8541.21.01
Datasheet
LGE BCW66H
EDA Models
EasyEDA Model
Minimum
20
Multiple
20
Standard Packaging
3000
Sales Unit
Piece
1+
$ 0.0163
500+
$ 0.0147
1,000+
$ 0.013
5,000+
$ 0.0125
10,000+
$ 0.012

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