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AOT12N50-VB
650V 18A 208W 340mΩ@10V 4V 1 N-Channel TO-220AB Single FETs, MOSFETs ROHS
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs |
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 18A |
| Pd - Power Dissipation | 208W |
| RDS(on) | 340mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| Number | 1 N-Channel |
| Output Capacitance(Coss) | 456pF |
| Input Capacitance(Ciss) | 4.826nF |
| Gate Charge(Qg) | 293nC@10V |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Datasheet | VBsemi Elec AOT12N50-VB |
| EDA Models | EasyEDA Model |
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| 1+ | $ 0.7993 |
| 100+ | $ 0.7378 |
| 500+ | $ 0.6886 |
| 2,000+ | $ 0.6763 |
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